Nanoparticle Based-Memristive Device

In-Memory Computer is different from von Neumann architectures based-modern computer, which directly processes data addressed in the storage unit. The memristive device is a novel non-volatile memory for in-memory computing, such as neuromorphic computing, and has the advantages of simple preparation, high storage density and low operating voltage.

The resistive switching random access memory (ReRAM), also memristive switching, is one approach to in-memory computing, and its resistive state represents the logic state. The basic structure of the ReRAM is metal-insulator-metal or metal-insulator-semiconductor. ZnO and TiO2 can be used to ReRAM as the insulator layer.

Assignment

The student will perform the assignment at ECTM:

• Duration: ~9 months.
• Location: EKL cleanrooms and facilities.

The expected activities to be carried out by the student are:

• Layout design and target substrate requirements definition.
• Intermediate layer materials selection
• Fabrication of the design in EKL facilities.
• Nanoporous materials spraying
• Device properties characterization

Requirements

You are an ambitious master student looking for a challenging thesis project on a micro- and nanoelectronics devices fabrication. You have a physics, material science or micro- and nanoelectronics background and an interest in micro fabrication technology. Good communication skills in English and a pro-active attitude are expected.

Contact

Last modified: 2023-12-05