dr. A. Burtsev

1. Near-ideal implanted shallow-junction diode formation by excimer laser annealing
   V. Gonda; A. Burtsev; T. L. M. Scholtes; L. K. Nanver;
   In Proc. IEEE Rapid Thermal Processing,
   pp. 93-100, 2005.
   document

2. Phase-Field Modelling of Excimer Laser Lateral Crustallization of Silicon Thin Films
   A. Burtsev; M. Apel; R. Ishihara; C.I.M. Beenakker;
   Thin Solid Films,
   Volume 427, Issue 1-2, pp. 309-313, Mar. 2003.

3. Advanced excimer-laser crystallization process for single-crystalline thin film transistors
   R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; J.W. Metselaar; C.I.M. Beenakker;
   Thin Solid Films,
   Volume 427, Issue 1-2, pp. 77-85, Mar. 2003.

4. Electrical characterization of silicon diodes formed by laser annealing of implanted dopants
   L.K. Nanver; J. Slabbekoorn; A. Burtsev; T.L.M. Scholtes; R. Surdeanu; F. Simon; H.J. Kalhert; J.W. Slotboom;
   In Proc. 203rd ECS,
   Paris, France, pp. 119-130, Apr. 2003. ISBN 1-56677-396-2.
   document

5. Location-controlled large Si islands by excimer-laser annealing on glass substrate
   A.A. Burtsev;
   PhD thesis, Delft University of Technology, Oct. 2003. ISBN 90-6734-019-7; Promotor: prof. C.I.M. Beenakker.

6. Energy Density Window for Location-Controlled Si Grains by Dual-Beam Excimer-Laser
   A. Burtsev; R. Ishihara; C. I. M. Beenakker;
   In Thin Solid Films,
   pp. 199-206, Nov. 2002. ISSN 0040-6090.

7. Single-Crystalline Si Thin-Film Transistors Fabricated with mu-Czochralski (Grain-Filter) Process
   R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; J.W. Metselaar; C.I.M. Beenakker;
   In M. Matsumura (Ed.), Tech Dig. 2002 Intern. Workshop on Active-Matrix LCDs - TFT Technologies and Rel. Materials,
   Tokyo, Japan, pp. 53-56, Jul. 2002 2002.

8. Excimer-Laser Lateral Crystallization Scenario of Silicon Thin Films by Phase-Field Modelling
   A. Burtsev; M. Apel; R. Ishihara;
   In Proceeding for 4th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE),
   Veldhoven, pp. 8-12, 2001.
   document

9. Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film for Location Control of Large Grain on Glass
   R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; F.C. Voogt; G.J. Bertens; J.W. Metselaar; C.I.M. Beenakker;
   In Proc. SPIE Flat Panel Display Technology and Display Metrology II,
   pp. 14-23, 2001.

10. Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion
    R. Ishihara; A. Burtsev; P. F. A. Alkemade;
    Jpn. Journal of Applied Physics,
    Volume 39, pp. 3872-3878, 2000. ISSN 0021-4922.

11. Enlargement of Location Controlled Si Grain by Dual-Beam Excimer-Laser Melting with Bump Structure
    A. Burtsev; R. Ishihara;
    Applied Surface Science 154-155,
    pp. 152-158, 2000. ISSN 0169-4332.

12. Energy Density Window for Location-Controlled Si Grains by Dual-Beam Excimer-Laser
    A. Burtsev; R. Ishihara;
    In Proc. SAFE 2000,
    Veldhoven, 29 november-1 december, pp. 15-22, 2000. ISBN 90-73461-24-3.

13. Processing window for location-controlled Si grains by dual-beam excimer-laser
    A. Burtsev; R. Ishihara;
    In Proc. SAFE 2000,
    Veldhoven, The Netherlands, 2000.

14. Dual-beam Excimer-Laser Induced Si Grain Size Enlargement in an a-Si/Structured SiO2/Metal Stack
    A. Burtsev; R. Ishihara;
    In Jean Pierre Veen (Ed.), SAFE 99,
    Mierlo, The Netherlands, 24, STW Technology Foundation, pp. 665-670, 1999. ISBN 90-73461-18-9.

15. An Anisotropic U-shape SF6 Based Plasma Silicon Trench Etching Investigation
    A. Burtsev; X.Y. Li; H.W. van Zeijl; C.I.M. Beenakker;
    Microelectronic Engineering,
    Volume 40, pp. 85-97, 1998. ISSN 0167-9317.

16. Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
    R. Ishihara; A. Burtsev;
    Japan. J. Appl. Phys,
    Volume 37, Issue 1, pp. 1071-1075, 1998.

17. Dual-beam excimer-laser irradiation of a-Si film on glass substrate
    R. Ishihara; A. Burtsev;
    In Ext. Abstr. 1997, Int. Conference on Solid State Devices and Materials,
    Hamamatsu, pp. 360-365, 1997.

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