dr. H.T.M. Pham

Postdoc
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

Themes: MEMS Technology

Publications

  1. Residue-free plasma etching of polyimide coatings for small pitch vias with improved step coverage
    B. Mimoun; H.T.M. Pham; V. Henneken; R. Dekker;
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures,
    Volume 31, Issue 2, pp. 021201-021201-6, Mar. 2013. DOI 10.1116/1.4788795.

  2. Micromachined nanofiltration modules for lab-on-a-chip applications
    C. Shen; V.R.S.S. Mokkapati; H.T.M. Pham; P.M. Sarro;
    Journal of Micromechanics and Microengineering,
    Volume 22, Issue 2, pp. 1-10., Jan. 2012. DOI 10.1088/0960-1317/22/2/025003.

  3. Residue-free plasma etching of polyimide coatings
    B. Mimoun; H.T.M. Pham; V. Henneken; R. Dekker;
    In International Conference on Electronics Packaging 2012 (ICEP),
    Tokyo, Japan, pp. 265-269, Apr. 2012.

  4. Mixed motion in deterministic ratchets due to anisotropic permeability
    T. Kulrattanarak; R.G.M. van der Sman; Y.S. Lubbersen; C.G.P.H. Schro�n; H.T.M. Pham; P.M. Sarro; R.M. Boom;
    Journal of Colloid and Interface Science,
    Volume 354, Issue 1, pp. 7-14., Feb. 2011. DOI 10.1016/j.jcis.2010.10.02.

  5. Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride or PE-ALD titanium nitride for void-free bottom-up copper electroplating
    M. Saadaoui; H. van Zeijl; W.H.A. Wien; H.T.M. Pham; C. Kwakernaak; H.C.M. Knoops; W.M.M. Erwin Kessels; R.M.C.M. van de Sanden; F.C. Voogt; F. Roozeboom; P.M. Sarro;
    IEEE Transactions on Components, Packaging and Manufacturing Technology,
    Volume 1, Issue 11, pp. 1728-1738, 2011. DOI 10.1109/TCPMT.2011.2167969.

  6. LPCVD amorphous SiCx for freestanding electron transparent windows
    B. Morana; J.F. Creemer; F. Santagata; C.C. Fan; H.T.M. Pham; G. Pandraud; F.D. Tichelaar; P.M. Sarro;
    In Y. Suzuki; Man Wong (Ed.), Proceedings of IEEE MEMS 2010 Conference,
    Wanchai, Hong Kong, IEEE, pp. 572-575), 2010.

  7. Fast response thermal linear motor with reduced power consumption
    S.L. Paalvast; H.T.M. Pham; P.M. Sarro; R.H. Munnig Schmidt;
    In Proceedings of the Eurosensors XXIII Conference, august 2009,
    Lausanne, pp. 690-693, 2009.

  8. Very thin SiC membranes for micromachined vacuum sensors
    H.T.M. Pham; C. Fan; G. Pandraud; J.F. Creemer; N.M. van der Pers; P. Visser; C. Kwakernaak;
    In Proceedings of IEEE sensors 2008,
    Lecce, Italy, pp. 1143-1146, 2009.

  9. Deterministic Ratchets for Particle Separation Fabricated With Si MEMS Technology
    H.T.M. Pham; T. Kulrattanarak; R.G.M. van der Sman; C. Schroen; R.M. Boom; P.M. Sarro;
    In Proc. of the Eurosensors XXIII conference,
    Lausanne, Switzerland, pp. 345-348, 2009.
    document

  10. Characterization of AlN thin films sputtered on Al/Ti electrodes for piezoelectric devices
    A.T. Tran; H. Schellevis; C. Shen; H.T.M. Pham; P.M. Sarro;
    In Proc. of SAFE 2009,
    Veldhoven, The Netherlands, STW, pp. 121-124, 2009.
    document

  11. Oxidized ALD-deposited titanium nitride films as a low-temperature alternative for enhancing the wettability of through-silicon vias
    M. Saadaoui; H.W. van Zeijl; H.T.M. Pham; H.C. Knoops; W.M.M. Kessels; M.C.M. van de Sanden; F. Roozeboom; Y. Lamy; K.B. Jinesh; W. Besling; P.M. Sarro;
    In MRS Proceedings Volume 1112, Materials and Technologies for 3-D Integration,
    Warrendale, PA, pp. 1-8, 2009.

  12. A Multifunctional Vertical Microsieve for Micro and Nano Particles Separation
    C. Shen; T.M.H. Pham; P.M. Sarro;
    In Micro Electro Mechanical Systems,
    Sorrento, Italy, pp. 383-386, 2009.

  13. Alignment insensitive anisotropic etching of silicon cavities with smooth 49� sidewalls
    C. Shen; H.T.M. Pham; P.M. Sarro;
    In he 15th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2009,
    pp. 1071-1074, 2009.
    document

  14. Aluminum thermal motor for high bandwidth positioning stages
    S.L. Paalvast; H.T.M. Pham; P.M. Sarro; R.H. Munnig Schmidt;
    In 9th international conference of the european society for precision engineering and nanotechnology,
    San Sebastian, SP, pp. 54-58, 2009.

  15. Fabrication of in situ ultrathin anodic aluminum oxide layers for nanostructuring on silicon substrate
    B. Yan; H.T.M. Pham; Y. Ma; Y. Zhuang; P.M. Sarro;
    Appl. Phys. Lett.,
    Volume 91, pp. 101902.1-3, 2007.

  16. Straight sidewall controlling of high viscosity SU-8 photoresist patterning using UV lithography
    C. Olivadoti; H.T.M. Pham; P.M. Sarro;
    In Proc. 18th MicroMechanics Europe (MME 2006),
    Guimares, Portugal, Univ. Minho, Sept. 2007.

  17. Roughness treatment of silicon surface after Deep Reactive Ion Etching
    H.T.M. Pham; Charles R. de Boer; P.M. Sarro;
    In Proc SAFE & Prorisc 2004,
    Veldhoven, The Netherlands, pp. 535-538, Nov. 2007.

  18. Comparing the costs of photoresist coating using spin, spray or electrodeposition systems
    N. P. Pham; J. Bertens; L. van d.Brekel; P. M.Sarro;
    Micromagazine Apr.,
    pp. 45-49, 2005.

  19. Particle filters integrated inside a silicon wafer
    W.Venstra; N.P. Pham; P.M. Sarro; J. van Eijk;
    Microlelectronic Engineering,
    Volume 78-79, 2005.

  20. Spray coating of photoresist for pattern transfer on high topography surfaces
    N P Pham; J.N.Burghartz; P.M. Sarro;
    J. Micromech. Microeng.,
    Volume 15, pp. 691-697, 2005.

  21. Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications, Materials
    S.B.S. Heil; E. Langereis; F. Roozeboom; A. Kemmeren; N.P. Pham; P.M. Sarro; M.C.M. van de Sanden; W.M.M. Kessels;
    In Technology and Reliability of Advanced Interconnects 2005,
    pp. B6.4.1-B6.4.6, 2005.
    document

  22. Porous silicon layeras a conformal insulator layer for high aspect ratio through wafer interconnects
    N.P. Pham; G.P. Salvador; P.M. Sarro;
    In Proc. Eurosensors XIX,
    2005.

  23. Influence of anodization parameters on the pore size and shape of anodic aluminum oxide nanotemplates
    S.H. Le; A. Camerlingo; H.T.M. Pham; P.M. Sarro;
    In Proc. Eurosensors XIX,
    2005.
    document

  24. Metal patterning on high topography surface for 3D RF devices fabrication
    N.P. Pham; E. Boellaard; W. Wien; L.D.M. van den Brekel; J.N. Burghartz; P.M. Sarro;
    Sensors and Actuators A,
    Volume 115, pp. 557-562, Mar. 2004.

  25. Photoresist Coating Methods for the Integration of Novel 3-D RF Microstructures
    N.P. Pham; E. Boellaard; J.N. Burghartz; P.M. Sarro;
    Journal of Microelectromechanical Systems,
    Volume 13, Issue 3, pp. 491-499, Jun. 2004. ISSN 1057-7157.

  26. Nanostructure formation on anodic aluminum oxide nanotemplates
    H. T.M. Pham; C.R. de Boer; P. M. Sarro;
    In The Second International Workshop on Nanophysics and Nanotechnology,
    Hanoi, Vietnam, pp. 91-98, Oct. 2004.

  27. High-aspect-ratio bulk micromachined vias contacts
    N.P. Pham; P.M. Sarro;
    In Proc SAFE, & Prorisc 2004,
    Veldhoven, pp. 657-661, Nov. 2004. ISBN 90-73461-43X.
    document

  28. PECVD silicon carbide: A structural material for surface micromachined devices
    H.T.M. Pham;
    PhD thesis, Delft University of Technology, Dec. 2004. ISBN 90-9018856-8; Promotor: prof. P.M. Sarro.

  29. Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films
    H.T.M. Pham; T. Akkaya; C.R. de Boer; P.M. Sarro;
    Material Science Forum,
    Volume 433-436, pp. 451-454, 2003. ISSN 0255-5476.

  30. Fabrication of a microfluidic chip for PCR applications
    M. Bu; B. Husband; T. Melvin; G. ensell; N.P. Pham; P.M. Sarro; J.S. Wilkinson; A.G.R. Evans;
    In Proc. MME 2003,
    Delft, The Netherlands, pp. 119-122, Nov. 2003. ISBN 90-808266-1-8.
    document

  31. A model for film thickness using direct spray coating
    N.P. Pham; J.N. Burghartz; P.M. Sarro;
    In Proc. IEEE EPTC conference,
    Singapore, Dec. 2003.
    document

  32. Metal patterning on high topography surface for 3-D RF devices fabrication
    N.P. Pham; E. Boellaard; W. Wien; L.D.M. van den Brekel; J.N. Burghartz; P.M. Sarro;
    In Proc. Eurosensors XVII,
    University of Minho, Guimaraes, Portugal, pp. 440-443, Sep. 2003.

  33. Silicon micromachining for RF technology
    P.N. Pham;
    PhD thesis, Delft University of Technology, May 2003. ISBN 90-6734-235-1; Promotors: prof. J.N. Burghartz, P.M. Sarro.

  34. Through-wafer copper electroplating for 3-D interconnects
    N.T. Nguyen; E. Boellaard; N.P. Pham; V.G. Kutchoukov; G. Craciun; P.M. Sarro;
    Journal of Micromechanics and Microengineering,
    Volume 12, Issue 4, pp. 395-399, Jul. 2002. ISSN 0960-1317.

  35. Through-silicon-chip transmission lines
    K.T. Ng; E. Boellaard; N.P. Pham; J.N. Burghartz;
    Electronics Letters,
    Volume 38, Issue 13, pp. 640-641, Jun. 2002.

  36. Substrate Options and Add-On Process Modules for Monolithic RF Silicon Technology
    J.N. Burghartz; M. Bartek; B. Rejaei; P.M. Sarro; A. Polyakov; N.P. Pham; E. Boullaard; K.T. Ng;
    In Proc. 2002 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2002),
    Monterey, CA, pp. 17-23, Sept. 2002. ISBN 0-7803-7562-9.

  37. CMOS-compatible wells for integrated high-speed screening arrays
    B.L. Gray; R. Moerman; L.R. van den Doel; H.R. Dietrich; V.P. Iordanov; N.P. Pham; L.M. Sarro; A. Bossche; M.J. Vellekoop;
    In Proc. SPIE: Biomedical Nanotechnology Architectures and Applications,
    pp. 103-108, Jan. 2002.

  38. Electrical and Optical Properties of PECVD SiC Thin Films for Surface Micromachined Devices
    H.T.M. Pham; T. Akkaya; C. de Boer; C.C.G. P. Visser.M. Sarro;
    In Proc. SeSens 2002,
    Veldhoven, The Netherlands, STW, pp. 662-666, Nov. 2002. ISBN 90-73461-33-2.

  39. Photoresist wells for integrated high-speed screening arrays
    B.L. Gray; R. Moerman; L.R. van den Doel; V.P. Iordanov; N.P. Pham; P.M. Sarro; A. Bossche; M.J. Vellekoop;
    In Proc. SESENS 2002,
    Veldhoven, The Netherlands, pp. 791-794, Nov. 2002. ISBN 90-73461-28-6.

  40. Spin, Spray and Eloctroplating of Photoresist for MEMS Structures: A Comparison
    N.P. Pham; E. Boellaard; P.M. Sarro; J.N. Burghartz;
    In Proc. SAFE 2002,
    Veldhoven, The Netherlands, STW, pp. 81-86, Nov. 2002. ISBN 90-73461-33-2.

  41. Through-Wafer Copper Electroplating for RF Silicon Technology
    N.T. Nguyen; K. Ng; E. Boellaard; N.P. Pham; G. Craciun; P.M. Sarro; J.N. Burghartz;
    In Proc. ESSDERC 2002,
    Firenze, Italy, University of Bologna, pp. 255-258, Sep. 2002. ISBN 88-900847-8-2.

  42. Electrical characteristics of plasma enhanced chemical vapor deposition silicon carbide thin films
    H.T.M. Pham; T. Akkaya; C.R. de Boer; P.M. Sarro;
    In Fourth European Conference on Silicon Carbide and Related Materials (ECSCRM 2002),
    Linkoping, Sweden, Sep. 2002.

  43. In-situ doped PECVD SiC for surface micromachined devices
    H.T.M. Pham; C.R. de Boer; L.S. Pakula; P.M. Sarro;
    In J. Saneistr; P. Ripka (Ed.), Eurosensors XVI - Part 1,
    Prague, Czech Republic, Czech Technical University, pp. 119-120, Sep. 2002. ISBN 80-01-02576-4.

  44. Direct spray coating of photoresist - a new method for patterning 3-D structures
    N.P. Pham; T.L.M. Scholtes; R. Klerks; E. Boellaard; P.M. Sarro; J.N. Burghartz;
    In J. Saneistr; P. Ripka (Ed.), Eurosensors XVI - Part 1,
    Prague, Czech Republic, Czech Technical University, pp. 89-90, Sep. 2002. ISBN 80-01-02576-4.

  45. Molecular-hydrogen interaction with a-SiC (100)3x2 and c(4x2) surfaces and with Si atomic lines
    V. Derycke; P. Fonteneau; N.P. Pham; P. Soukiassian;
    Physical Review B,
    Volume 63, Issue 20, pp. 201305/1-201305, May 2001. ISSN 0163-1829.

  46. IC-compatible two-level bulk micromachining process module for RF silicon technology
    N.P. Pham; P.M. Sarro; K.T. Ng; J.N. Burghartz;
    IEEE Tr. Electron Devices,
    Volume 48, Issue 8, pp. 1756-1764, Aug. 2001.

  47. A Single Chip 1.8 GHz LNA and Power Amplifier with Improved Isolation Using Micromachining
    F.M. De Paola; L.C.N de Vreede; L.K. Nanver; B. Rajaei; N.P. Pham; N. Rinaldi; J.N. Burghartz;
    In SAFE 2001,
    Veldhoven, The Netherlands, pp. 35-41, Nov. 2001.

  48. Evaluation of In-Situ Doped PECVD SiC Thin Films for Surface Micromachining
    H.T.M. Pham; C.R. de Boer; C. Kwakernaak; W.G. Sloof; P.M. Sarro;
    In Proceedings of SESENS 2001,
    Veldhoven, The Netherlands, pp. 856-860, 2001. ISBN 90-73461-29-4.
    document

  49. Dry Etching Release of Structures in Post-Process Surface Micromachining using Polyimide as a Sacrificial Layer
    A. Bagolini; H.T.M. Pham; T.L.M. Scholtes; L. Pakula; P.M. Sarro;
    In Proceedings of SESENS 2001,
    Veldhoven, The Netherlands, pp. 769-772, 2001. ISBN 90-73461-29-4.
    document

  50. RF-devices realised in MEMS by using electrodepositable photoresist
    E. Boellaard; P.N. Pham; L.D.M. van den Brekel; J.N. Burghartz;
    In Proceedings of SAFE 2001,
    Veldhoven, The Netherlands, 2001. ISBN 90-73461-28-6.

  51. Polyimide sacrificial layer for post-processing surface micromachining
    A. Bagolini; T.L.M. Scholtes; H.T.M. Pham; L. Pakula; P.M. Sarro;
    In M.Hill; B.Lane (Ed.), Proc. MME 2001,
    Cork, Ireland, pp. 58-61, Sept. 2001.

  52. A Micromachining Post-Process Module with Pattern Transfer in Deep Cavities for RF Silicon Technology
    N.P. Pham; P.M. Sarro; K. Ng; J.N. Burghartz;
    In Proc. MEMS 2001,
    Interlaken, Switzerland, pp. 345-348, Jan. 2001. ISBN 0-7803-5998-4.

  53. Influence of deposition parameters and temperature on stress and strain of in-situ doped PECVD Silicon carbide
    H.T.M. Pham; C.R. de Boer; L. Pakula; P.M. Sarro;
    In S. Yoshida et al. (Ed.), Proc. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001),
    Tsukuba, Japan, pp. 759-762, Oct. 2001. ISBN 0-87849-X.

  54. Mechanical and structural properties of in-situ doped PECVD SiC layers for post-processing surface micromachining
    H.T.M. Pham; C.R. de Boer; C. Kwakernaak; W.G. Sloof; P.M. Sarro;
    In Proc of SPIE Micromachining and Microfabrication,
    San Francisco, CA, pp. 272-279, 2001. ISBN 0-8194-4285-2.

  55. Effect of annealing on mechanical and optical properties of in-situ doped sic thin films
    H.T.M. Pham; C.R. de Boer; C.C.G. P. Visser.M. Sarro;
    In Proc of SPIE International Symposium on Optoelectronics and Microelectronics,
    Nanjing, China, pp. 59-66, 2001. ISBN 0-8194-4340-9.

  56. Integrated RF passive components - discrete vs. distributed
    J.N. Burghartz; K.T. Ng; N.P. Pham; B. Rejaei; P.M. Sarro;
    In Device Research Conference,
    pp. 113-114, 2001.
    document

  57. Self-organized 1D nanostructures on the b-SiC(100) surface: silicon atomic lines and dimer vacancy chains
    V. Derycke; N.P. Pham; et al;
    Applied Surface Science 162-163,
    pp. 413-418, 2000.

  58. A Micromachining Post-Process Module for RF Silicon Technology
    N.P. Pham; K.T. Ng; M. Bartek; P. M. Sarro; B. Rejaei; J.N. Burghartz;
    In Proc. IEDM 2000,
    San Francisco, USA, pp. 481-484, Dec. 2000. ISBN 0-7803-6438-4.

  59. A novel micromachining process using pattern transfer over large topography for RF components
    N.P. Pham; P.M. Sarro; K.T. Ng; R. Behzad; J.N. Burghartz;
    In Proc. SAFE,
    Veldhoven, pp. 125-128, 2000. ISBN 90-73461-24-3.

  60. Integrated Transmission Lines on High-Resistivity Silicon: Coplanar Waveguides or Microstrips?
    B. Rejaei; K.T. Ng; C. Floerkemeier; N.P. Pham; L.K. Nanver; J.N. Burghartz;
    In Proc. of ESSDERC 2000,
    Cork, Ireland, pp. 460-463, Sept. 2000. ISBN 2-86332-248-6.

  61. A Sub-Surface Metallization Post-Process IC Module for RF Technology
    K.T. Ng; N.P. Pham; B. Rejaei; P.M. Sarro; J.N. Burghartz;
    In Proc. of IEEE BCTM,
    Minneapolis, pp. 195-198, Sept. 25-27 2000. ISBN 0-7803-6384-1.

  62. IC-compatible Two-level Bulk Micromachining for RF Silicon Technology
    N.P. Pham; P.M. Sarro; K.T. Ng; J.N. Burghartz;
    In Proc. ESSDERC,
    Cork, Ireland, pp. 204-207, Sept. 2000. ISBN 2-86332-248-6.

  63. Characterization of a Bullk-Micromachined Post-Process Module for Silicon RF Technology
    K.T. Ng; N.P. Pham; P.M. Sarro; B. Rejaei Salmassi; J.N. Burghartz;
    In IEEE topical meeting on Silicon Monolithic integrated Circuits RF systems,
    pp. 99-102, Apr. 2000.

  64. Design and Characterization of Passive RF Structures on Reduced-Thickness Conductor-Backed Substrates
    K.T. Ng; B. Rejaei; N. Pham; J.N. Burghartz;
    In Proc. SAFE 99,
    Mierlo, The Netherlands, pp. 329-331, Nov. 1999. ISBN 90-73461-18-9.

BibTeX support

Last updated: 16 Jun 2014

Hoa Pham

Alumnus
  • Left in 2012