MSc Jinglin Li

PhD student
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

Biography

Jinglin obtained master degree in Microelectronics at TU Delft in 2022, and his master thesis is concerned with the physical modelling and characterisation of silicon carbide devices, especially at high temperatures.

His current research interest is wide-bandgap semiconductor physics, simulations and reliability problems. 

Publications

  1. A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology
    Jiarui Mo; Jinglin Li; Yaqian Zhang; Joost Romijn; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
    IEEE Electron Device Letters,
    Volume 44, Issue 6, pp. 995-998, 2023. DOI: 10.1109/LED.2023.3268334

  2. MOSFET-based And P-N Diode Based Temperature Sensors In A 4H-sSiC CMOS Technology
    Jiarui Mo; Jinglin Li; Yaqian Zhang; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
    In 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2023),
    2023.

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Last updated: 1 May 2023