Gianpaolo Lorito
Publications
- Design of silicon micro-resonators with low mechanical and optical losses for quantum optics experiments
Borrielli, A; Bonaldi, M; Serre, E; Bagolini, A; Bellutti, P; Cataliotti, FS; Marin, F; Marino, F; Pontin, A; Prodi, GA; Pandraud, G; Sarro, PM; Lorito,; Zoumpoulidis, T;
Microsystem Technologies,
Volume 20, Issue 4-5, pp. 907-917, 2014. - SiGe heterojunction bipolar transistors with Schottky collector contacts
Gianpaolo Lorito;
PhD thesis, Delft University of Technology, 2014.
document - Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques
L. Qi; G. Lorito; L.K. Nanver;
IEEE Transactions on Semiconductor Manufacturing,
Volume 25, Issue 4, pp. 581-588, 2012. DOI 10.1109/TSM.2012.2206834. - Lateral bipolar structures for evaluating the effectiveness of surface doping techniques
G. Lorito; L. L. Qi K. Nanver;
In Proc. of IEEE International Conference on Microelectronic Test Structures (ICMTS 2011),
Amsterdam, pp. 108-113, Apr. 2011. DOI 10.1109/ICMTS.2011.5976870. - Simple method to evaluate minority carrier injection levels in schottky diodes
L. Qi; G. Lorito; L.K. Nanver;
In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
Veldhoven, The Netherlands, pp. 1-3, Nov. 2011. - Deep p+ junctions formed by drive-in from pure boron depositions.
P. Maleki; T.L.M. Scholtes; M. Popadic; F. Sarubbi; G. Lorito; S. Milosavljevic; W.B. de Boer; L.K. Nanver;
In International Workshop on Junction Technology (IWJT), 2010,
Shanghai, China, pp. 1�4, 2010. - Pure-Boron Chemical-Vapor-Deposited Layers: a New Material for Silicon Device Processing
L.K. Nanver; T. L. M. Scholtes; F. Sarubbi; W.B. de Boer; G. Lorito; A. Sakic; S. Milosavljevic; C. Mok; L. Shi; S. Nihtianov; K. Buisman;
In 18th Annual Conference on Advanced Thermal Processing of Semiconductors-RTP 2010,
Gainesville, FL, Sep. 2010. - Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing.
G. Lorito; L. Qi; L.K. Nanver;
In 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010),
Shanghai, China, pp. 972-974, 2010.
document - Analytical Model of I-V Characteristics of Arbitrarily Shallow p-n Junctions
M. Popadic; G. Lorito; L. K. Nanver;
IEEE Transactions on Electron Devices,
Volume 56, Issue 1, pp. 116-125, 2009. - Analytical Carrier Transport Model for Arbitrarily Shallow p-n Junctions
M. Popadic; G. Lorito; L.K. Nanver;
IEEE Transactions on Electron Devices,
Volume 56, Issue 1, pp. 116-125, 2009. - Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
IEEE Journal of Solid-State Circuits,
Volume 44, Issue 9, pp. 2322-2338, 2009. - Chemical Vapor Deposition of Gallium on Silicon and SiO2. In PJ French
A. Sammak; W.B. de Boer; L.K. Nanver; L. Qi; G. Lorito;
In Proc. of SAFE 2009,
Veldhoven, The Netherlands, pp. 538-541, 2009.
document - Application of amorphous boron layer as diffusion barrier for pure aluminium
A. Sakic; G. Lorito; F. Sarubbi; T.L.M. Scholtes; J. van der Cingel; L.K. Nanver;
In Proc. of SAFE 2009,
Veldhoven, The Netherlands, pp. 112-115, 2009.
document - Evaluation of Al-doped SPE ultrashallow P+N Junctions for use as PNP SiGe HBT Emitters
Yann Civale; Gianpaolo Lorito; Cuiqin Xu; Lis K. Nanver; Ramses van der Toorn;
In Proceedings of IEEE International Workshop on Junction Technology (IWJT 2008),
Shanghai, China, pp. 97-100, May 2008.
document - Analytical carrier transport model for arbitrary shallow p-n junctions
M. Popadic; G. Lorito; L.K. Nanver;
In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
Niza, Serbia, pp. 155-158, May 2008. - Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology
L.K. Nanver; V. Gonda; Y. Civale; T.L.M. Scholtes; L. La Spina; H. Schellevis G. Lorito; F. Sarubbi; M. Popadic; K. Buisman; S. Milosavljevic; E.J.G. Goudena;
In Proceedings of 9th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2008),
Beijing, China, pp. 1184-1187, Oct. 2008. - SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion
G. Lorito; V. Gonda; T.L.M. Scholtes; L.K. Nanver;
In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
Niza, Serbia, pp. 291-294, May 2008. - RF/Microwave Device Fabrication in Silicon-on-Glass Technology
L..K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
Niza, Serbia, pp. 273-280, May 2008. - Special RF/Microwave Devices in Silicon-on-Glass Technology
L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
In Proceedings of IEEE Bipolar/BiCMOS Circuit and Technology Meeting (BCTM 2008),
Monterey, CA, USA, pp. 33-40, Oct. 2008. - Reduction of alloying temperature of metallization stacks containing Al/Ti/TiN from 400 to 300�C
G. Lorito; L.K. Nanver;
In Proc. 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE),
Veldhoven, The Netherlands, Nov. 2008. - Analysis of Si-Ti and Si-TiN interface after 400�C alloying
G. Lorito; L. K. Nanver; H. Schellevis;
In Proc. SAFE/STW,
Veldhoven, The Netherlands, pp. 525-528, Nov. 2007. - Reliability issues related to laser-annealed implanted back-wafer contacts��in bipolar silicon-on-glass processes
G. Lorito; V. Gonda; S. Liu; T. L. M. Scholtes; H. Schellevis; L. K.�� Nanver;
In Proc. IEEE International Conference on Microelectronics, MIEL,
Belgrade, Serbia and Montenegro, IEEE, pp. 369-372, 2006. ISBN 1-4244-0116-x. - Silicon-on-glass technology for RF and microwave device fabrication
Lis K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; H. Cong; S. Milosavljevic; E.J.G. Goudena;
In 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ICSICT-2006,
Shanghai, China, pp. 162-165, 2006. ISBN 1-4244-0160-7.
document - Analytical modeling and numerical simulations of the offset voltage in silicon-on-glass vertical PNP's
G. Lorito; L. K. Nanver; N. Nenadovic;
In Proc. STW/SAFE,
Veldhoven, The Netherlands, pp. 32-36, 2005.
document - Offset voltage of Schottky-collector silicon-on-glass vertical PNP's
G. Lorito; L. K. Nanver; N. Nenadovic;
In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM,
pp. 22-25, 2005.