Vahid Mohammadi

1. Low temperature PureB technology for CMOS compatible photodetectors
   Vahid Mohammadi;
   PhD thesis, Delft University of Technology, 2015.
   document

2. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications
   Golshani, Negin; Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.;
   APL Materials,
   Volume 2, Issue 10, pp. 100702, 2014.
   document

3. Robust UV/VUV/EUV PureB Photodiode Detector Technology with High CMOS Compatibility
   L.K. Nanver; L. Qi; V. Mohammadi; K.R.M. Mok; W.B. de Boer; N. Golshani; A. Sammak; T.L.M. Scholtes; A. Gottwald; U. Kroth; F. Scholze;
   Journal of Selected Topics in Quantum Electronics,
   Volume 20, Issue 6, pp. pp.1-11, 2014.

4. Temperature Dependency of the Kinetics of PureB CVD Deposition over Patterned Si/SiO2 Surfaces
   V. Mohammadi; N. Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver;
   Microelectronic Engineering,
   Volume 125, pp. 45-50, 2014.

5. Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si
   Mohammadi, V; Ramesh, S; Nanver, LK;
   In Proceedings - 2014 IEEE International Conference on Microelectronic Test Structures,
   pp. 194-199, 2014.

6. Local Loading Effect of The Pure-Boron-Layer Chemical-Vapor Depositions
   V. Mohammadi; W.B. de Boer; T.L.M. Scholtes; L.K. Nanver;
   ECS Transactions,
   Volume 50, Issue 4, pp. 333-341, 2013. DOI 10.1149/05004.0333ecst.

7. VUV/Low-Energy-Electron Si Photodiodes with Post-Metal 400�C PureB Deposition
   V. Mohammadi; L. Qi; N. Golshani; K. R. C. Mok; W. B. de Boer; A. Sammak; J. J. Derakhshandeh. van der Cingel; L. K. Nanver;
   IEEE Electron Device Letters,
   Volume 34, Issue 12, 2013. DOI 10.1109/LED.2013.2287221.

8. Effects of Annealing on Chemical-Vapor Deposited PureB Layers
   K. R. C. Mok; A. H. G. Vlooswijk; V. Mohammadi; L. K. Nanver;
   ECS Journal of Solid State Science and Technology,
   Volume 2, Issue 9, pp. 413-417, 2013. DOI 10.1149/2.044309jss.

9. A Simple Model describing the kinetic of CVD Deposition of Pure-Boron Layers from Diborane
   V. Mohammadi; W.B. de Boer; T.L.M. Scholtes; L.K. Nanver and;
   ECS Transactions,
   Volume 45, Issue 31, pp. 57-65, 2013. DOI 10.1149/04531.0057ecst.

10. Piezoelectric Pressure Sensor Based on Enhanced Thin-Film PZT Diaphragm Containing Nanocrystalline Powders
    V. Mohammadi;
    In F. Ebrahimi (Ed.), InTech-Piezoelectrisc Materials and Devices - Practice and Applications,
    Feb. 2013. ISBN 978-953-51-1045-3, DOI 10.5772/54755s.
    document

11. Investigation of the Issues Arising by Lowering the Deposition Temperature of the PureB-layer on Si/SiO2 Surfaces
    V. Mohammadi; N. Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver and;
    In ICT.OPEN,
    Eindhoven, The Netherlands, Nov. 2013.

12. High-Ohmic Resistors using Nanometer-Thin Pure-Boron Chemical-Vapour-Deposited Layers
    N. Golshani; V. Mohammadi; S. Ramesh; L.K. Nanver and;
    In ESSDERC 2013,
    2013.

13. Temperature Dependency of the Kinetics of PureB CVD Deposition over Patterned Si/SiO2 Surfaces
    V. Mohammadi; N.Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver and;
    In E-MRS 2013 Fall Meeting 2013,
    Warsaw, Poland, Sep 2013.
    document

14. An Analytical Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane
    V. Mohammadi; W.B. de Boer; L.K. Nanver and;
    Journal of Applied Physics,
    Volume 112, 2012. DOI 10.1063/1.4767328.

15. Pattern dependency and loading effect of pure-boron-layer chemical-vapor deposition
    V. Mohammadi; W.B. de Boer; T.L.M. Scholtes; L.K. Nanver;
    ECS Journal of Solid State Science and Technology,
    Volume 1, Issue 1, pp. Q16-Q20, 2012. DOI 10.1149/2.024201jss.

16. Temperature dependence of chemical-vapor deposition of pure boron layers from diborane
    V. Mohammadi; W.B. de Boer; T.L.M. Scholtes; L.K. Nanver;
    Applied Physics Letters,
    Volume 101, Issue 11, pp. 1-4, 2012. DOI 10.1063/1.4752109.

17. Impact of the Process and Chamber Parameters on CVD Deposition of PureB layer
    V. Mohammadi; W.B. de Boer; T.L.M. Scholtes; L.K. Nanver;
    In ICT.OPEN: Micro technology and micro devices (SAFE 2012),
    Rotterdam, The Netherlands, Oct. 2012.

18. Pattern dependency of pure-boron-layer chemical-vapor depositions
    V. Mohammadi; W.B. de Boer; T.L.M. Scholtes; L.K. Nanver;
    In 221st ECS Meeting: ECS Transactions,
    Seattle, Washington, pp. 39-48, May 2012. DOI 10.1149/1.3700937.

19. Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
    L.K. Nanver; A. Sammak; V. Mohammadi; K.R.C. Mok; L. Qi; A. Sakic; N. Golshani; J. Derakhshandeh; T.M.L. Scholtes; W.D. de Boer;
    In ECS Trans. 2012: 27th Symposium on Microelectronics Technology and Devices (SBMicro2012),
    Brazil, Brasilia, pp. 25-33, Aug. 2012. DOI 10.1149/04901.0025ecst.

20. Applications of PureB and PureGaB ultrashallow junction technologies
    L.K. Nanver; A. _akic; V. Mohammadi; J. Derakhshandeh; K.R.C. Mok; L. Qi; N. Golshani; T.M.L. Scholtes; W.B. de Boer;
    In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSCT 2012),
    Xi'an, pp. 303-306., Oct. 2012.
    document

21. Low-pressure chemical vapor deposition of pureB layers on silicon for p+n junction formation
    K.R.C. Mok; V. Mohammadi; L.K. Nanver; W.D. de Boer; A.H.G. Vlooswijk;
    In 12th International Workshop on Junction Technology (IWJT 2012),
    Shanghai, China, pp. 113-116, May 2012. DOI 10.1109/IWJT.2012.6212822.

22. On the uniformity of pure-boron-layer depositions
    V. Mohammadi; W.D. de Boer; T.L.M. Scholtes; A. Sakic; C. Heerkens; L.K. Nanver;
    In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
    Veldhoven, The Netherlands, pp. 73-75, Nov. 2011.

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