project description

AlGaN/GaN High Electron Mobility Transistor (HEMT) Gas Sensor Platform Development (GaN-sensor)

Themes: MEMS Technology, Micro/Nano System Integration and Reliability

AlGaN/GaN high electron mobility transistor (HEMT) have promise for use as gases and liquid sensors for a variety of industrial, military, and commercial applications. The wide-bandgap semiconductor-based sensors have numbers of advantages over other sensor technologies, such as operate at high temperatures, high chemical stability, or under ionizing radiation. In this project, we will focus on development of high performance AlGaN/GaN HEMT gas sensor at low power consumption, which include the sensor design, fabrication, testing and packaging. We will explore the possibilities to integrate the sensors with embedded passives, MEMS or COMS components. By integrating microheater with the GaN HEMT sensors we can reduce the temperature and heating time and increase sensitivity. New functional materials and sensor array will be used for improving the sensitivity and selectivity of sensors.

Project data

Starting date: September 2015
Closing date: September 2019
Sponsor: Beijing Delft Institute of Intel
Partners: Prof. Zewen Liu, Tsinghua University

Contact:

Kouchi Zhang