MEMS Technology

Contact: Lina Sarro

The general concept of microsystems technology is to combine new materials with IC technology and micromachining technologies to form the three basic building blocks of every microsystem: sensing/actuation element, signal processing, package. Further miniaturization well into the submicron region is needed especially for application areas presently recognized to be of strategic importance or of highly societal relevance, such as telecommunications, genetic research/diagnostics, transportation and medicine. This presents great challenges both in terms of micro-structuring techniques, fundamental effects and material properties. Within ECTM these challenges are addressed through several projects. In particular research focuses on the effective three-dimensional micro structuring together with the introduction of new materials into microelectronics while preserving compatibility with IC processes.

Projects under this theme

Graphene Flagship core 3: Transferless graphene in sensing applications

Monolithically integrated SiC sun sensor for Space

Fabrication of Ultrathin Dynodes for Timed Photon Counter


AlGaN/GaN High Electron Mobility Transistor (HEMT) Gas Sensor Platform Development

AlGaN/GaN High Electron Mobility Transistor (HEMT) Gas Sensor Platform Development

Piezoelectric Technology for Liquid Applications

Thermal management in 3d heterogeneous integration

Wafer-scale fabrication of graphene for sensing applications

Sensing Devices for Organ on Chip Technology

BiopsyPen: A portable coherent tomography scanner

Artificial Dielectric Layer for Terahertz application

MEMS nanoreactors for atomic-scale microscopy of nanomaterials under industrially relevant conditions

MEMS nanoreactors are used to study chemical reactions in high-resolution microscopes

Carbon nanotube and atomic layer based solid-state supercapacitors

Thin-film encapsulation of MEMS microcavities

With zero-level packaging or thin-film encapsulation, MEMS are already sealed during wafer processing.